JAN2N3636UB

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Exact specifications should be obtained from the product data sheet.
Exact specifications should be obtained from the product data sheet.
Part model

Description

Manufacturer
Microchip Technology
QTY
PRICE
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orders can generally be ready to ship within 48 hours.
JAN2N3636UB Specifications
Bipolar (BJT) Transistor PNP 175 V 1 A 1.5 W Surface Mount 3-SMD
Type | Description |
---|---|
Category | Discrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single |
Series | Military, MIL-PRF-19500/357 |
Package | Bulk |
Product Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1 A |
Voltage - Collector Emitter Breakdown (Max) | 175 V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
Power - Max | 1.5 W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, No Lead |
Supplier Device Package | 3-SMD |
Base Product Number | 2N3636 |
Technical description
-
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