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2N6299
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Exact specifications should be obtained from the product data sheet.
Exact specifications should be obtained from the product data sheet.
Part model
2N6299 Description
PNP TRANSISTOR Manufacturer
Microchip Technology
QTY
PRICE
- 1+RFQ
- 100+RFQ
- 1000+RFQ
orders can generally be ready to ship within 48 hours.
2N6299 Specifications
Bipolar (BJT) Transistor PNP - Darlington 80 V 8 A 64 W Through Hole TO-66 (TO-213AA)
| Type | Description |
|---|---|
| Category | Discrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Power - Max | 64 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 (TO-213AA) |
| Base Product Number | 2N6299 |
Technical description
-
2N6299 Download
Pdf, 1.45 MB
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