2N2484

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Exact specifications should be obtained from the product data sheet.
Exact specifications should be obtained from the product data sheet.
Part model

Description

Manufacturer
Microchip Technology
QTY
PRICE
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orders can generally be ready to ship within 48 hours.
2N2484 Specifications
Bipolar (BJT) Transistor NPN 60 V 50 mA 360 mW Through Hole TO-18
Type | Description |
---|---|
Category | Discrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single |
Series | - |
Package | Bulk |
Product Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 50 mA |
Voltage - Collector Emitter Breakdown (Max) | 60 V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
Current - Collector Cutoff (Max) | 2nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 225 @ 10mA, 5V |
Power - Max | 360 mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package | TO-18 |
Base Product Number | 2N2484 |
Technical description
-
2N2484 Download
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